Ultrafast spatial Al₂O₃ atomic layer deposition

The excellent surface properties of Al₂O₃ passivation layers are an important feature for new high efficiency cells. Spatial ALD allows the implementation of thin Al₂O₃ layers into mass production.

Features and Benefits

• Atmospheric process – no vacuum required
• Real atomic layer by layer deposition
• Superior passivation effect
• Uniformity of layer thickness wafer to wafer <4%
• Throughput up to 3600 wafers/h,
  based on 10 nm Al₂O₃
• Flexibility in layer thickness
• Deposition rate 1.0 nm/s per deposition unit
• Modular deposition unit is field replaceable
• Lowest CoO
• Inline system

       • Abscheidung an der Kante der
          unbeschichteten Seite < 1 mm
       • Hohe Uptime aufgrund des modularen Designs
       • Weniger Reinigungsaufwand der Prozesskammern
          im Vergleich zu PECVD